Selective Ionization of Group I Elements from Laser Ablated Plumes of Rb Ga Sb, K3Ga3As4, and K4In4As6
Department of Chemistry
Experimental results are reported on the I-III-V Zintl compounds Rb·Ga·Sb, K3Ga3As4, and K4In4As6 with respect to laser ablation and subsequent laser ionization/removal processes. The approach takes advantage of the low ionization potentials of the group I elements to achieve selectivity and exert a measure of control over neutral mixtures. A 308 nm laser pulse is used to ablate a I-III-V Zintl compound, while a second laser is used to selectively ionize the ejected species within the extraction region of a time-of-flight mass spectrometer. With the second laser operating at 248 nm (in the case of Rb·Ga·Sb) and at 266 nm (in the case of K3Ga3As4 and K4In4As6), selective gas-phase ionization and removal of the group I elements is clearly demonstrated.
Panayotov, V.; Hamar, K.; Red, C.; Birdwhistell, T; and Koplitz, B., "Selective Ionization of Group I Elements from Laser Ablated Plumes of Rb Ga Sb, K3Ga3As4, and K4In4As6" (1998). Faculty and Staff Publications. 87.